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A highly reliable GaInAs-GaInP 0.98-/spl mu/m window laser

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4 Author(s)
J. -I. Hashimoto ; Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan ; N. Ikoma ; M. Murata ; T. Katsuyama

A novel window structure realized by selective N ion implantation and subsequent rapid thermal annealing has been applied to overcome the catastrophic optical damage (COD) of a GaInAs-GaInP laser emitting in the 0.98-/spl mu/m wavelength region. A kink-free output power up to 220 mW at 25/spl deg/C was obtained. Laser characteristics including the I-L, far-field pattern, and lasing spectrum were almost the same as those of a conventional nonwindow laser consisting of the same structure except for the window region. In a 50/spl deg/C, APC-150 mW aging test, the window lasers have operated stably beyond 16 000 h, and no damage has been observed. Under this aging condition, a median lifetime of 280 000 h was obtained from log-normal plotting of aging characteristics. This marked improvement in reliability is due to a remarkable increase of damage tolerance realized by the window structure. In addition, there was minimal change in the characteristic of the window laser during the aging, indicating the absence of serious inner degradation. These results clearly show that our 0.98-/spl mu/m window laser suppresses both COD failure and inner degradation satisfactorily and can be used in practical applications.

Published in:

IEEE Journal of Quantum Electronics  (Volume:36 ,  Issue: 8 )