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Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on GaAs substrates

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6 Author(s)
M. Yamada ; Optical Interconnection Lab., NEC Corp., Japan ; T. Anan ; K. Tokutome ; A. Kamei
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GaAsSb quantum-well (QW) edge-emitting lasers grown on GaAs substrates were demonstrated. The optical quality of the QW was improved by optimizing the growth conditions and introducing a multi-QW to increase the gain. As a result, 1.27-μm lasing of a GaAs/sub 0.66/Sb/sub 0.34/-GaAs double-QW laser was obtained with a low-threshold current density of 440 A/cm2, which is comparable to that in conventional InP-based long-wavelength lasers. 1.30 μm lasing with a threshold current density of 770 A/cm2 was also obtained by increasing the antimony content to 0.36. GaAsSb QW was found to be a suitable material for use in the active layer of a 1.3-μm vertical-cavity surface-emitting lasers.

Published in:

IEEE Photonics Technology Letters  (Volume:12 ,  Issue: 7 )