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GaAsSb quantum-well (QW) edge-emitting lasers grown on GaAs substrates were demonstrated. The optical quality of the QW was improved by optimizing the growth conditions and introducing a multi-QW to increase the gain. As a result, 1.27-/spl mu/m lasing of a GaAs/sub 0.66/Sb/sub 0.34/-GaAs double-QW laser was obtained with a low-threshold current density of 440 A/cm/sup 2/, which is comparable to that in conventional InP-based long-wavelength lasers. 1.30 /spl mu/m lasing with a threshold current density of 770 A/cm/sup 2/ was also obtained by increasing the antimony content to 0.36. GaAsSb QW was found to be a suitable material for use in the active layer of a 1.3-/spl mu/m vertical-cavity surface-emitting lasers.