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A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET's with sub-2 nm gate oxides

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3 Author(s)
Nian Yang ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Henson, W.K. ; Wortman, Jimmie J.

This work examines different components of leakage current in scaled n-MOSFET's with ultrathin gate oxides (1.4-2.0 nm). Both gate direct tunneling and drain leakage currents are studied by theoretical modeling and experiments, and their effects on the drain current are investigated and compared. It concludes that the source and drain extension to the gate overlap regions have strong effects on device performance in terms of gate tunneling and off-state drain currents

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 8 )

Date of Publication:

Aug 2000

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