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A new model for thermal channel noise of deep submicron MOSFETs and its application in RF-CMOS design

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3 Author(s)
Knoblinger, G. ; Infineon Technol. AG, Germany ; Klein, P. ; Tiebout, M.

In this paper we present a simple analytical model for the thermal channel noise of deep submicron MOS transistors including hot carrier effects. The model is verified by measurements and implemented in the standard BSIM3v3 SPICE model. We show that the consideration of this additional noise caused by hot carrier effects is essential for the correct simulation of the noise performance of a LNA in the GHz range.

Published in:

VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on

Date of Conference:

15-17 June 2000