By Topic

Analysis and design of silicon bipolar distributed oscillators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
A. Hajimiri ; Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA ; Hui Wu

A systematic approach to design of silicon bipolar distributed oscillators and voltage-controlled oscillators (VCOs) is presented. The operation of the distributed oscillators is analyzed and the general condition for oscillation is derived, resulting in analytical expressions for the frequency and amplitude of the distributed oscillators. Special attention is paid to transmission line modeling that largely determines the performance of the distributed oscillators. A distributed VCO operating at 12 GHz dissipating 13 mW of power is demonstrated. The VCO has a tuning range of 26% with a phase noise of -104 dBc/Hz at 1 MHz offset from the carrier. A second design shows a 17 GHz bipolar distributed oscillator, which dissipates 9 mW of power.

Published in:

VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on

Date of Conference:

15-17 June 2000