Advanced SOI-MOSFETs with strained-Si channel for high speed CMOS-electron/hole mobility enhancement

In this work, we propose strained-Si MOSFETs on double-layer SiGe films with different Ge contents as high performance p-MOSFETs. Actually, we demonstrate high hole mobility enhancement (45% against that in control-SOI MOSFETs and 30% against the universal mobility) in strained-SOI p-MOSFETs including double-hetero structures (Si/sub 0.82/Ge/sub 0.18//Si/sub 0.9/Ge/sub 0.1/) for the first time. Moreover, it is also demonstrated that the electron mobility in n-channel strained-SOI MOSFETs is enhanced by about 60%, using single SiGe layer with the Ge content of as low as 10%.