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Impact of ion implantation statistics on V/sub T/ fluctuations in MOSFETs: comparison between decaborane and boron channel implants

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8 Author(s)
Tuinhout, H. ; Philips Res. Lab., Eindhoven, Netherlands ; Widdershoven, F. ; Stolk, P. ; Schmitz, J.
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MOSFETs with virtually identical doping profiles and DC behaviour exhibit significantly larger stochastic threshold voltage fluctuations when the channel is implanted using decaborane (B/sub 10/H/sub 14/) as compared to those with conventional boron implanted channels. This paper presents a unique experimental confirmation of the contribution of ion implantation statistics to V/sub T/ fluctuations.

Published in:

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Date of Conference:

13-15 June 2000