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Improvement of the tail component in retention time distribution using buffered n-implantation with tilt and rotation (BNITR) for 0.2 um DRAM cell and beyond

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10 Author(s)
Ilgweon Kim ; Memory R&D Div., Hyundai Micro Electron. Co. Ltd., Chungbuk, South Korea ; Namsung Kim ; Hyuckchai Jung ; Hoyup Kwon
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The novel junction process scheme in DRAM memory cell with 0.2 um design rule and STI (Shallow Trench Isolation) has been investigated to improve the tail component of DRAM retention time distribution. In this paper, we propose BNITR (Buffered N-Implantation with Tilt and Rotation) process scheme that is designed on the basis of the local field-enhancement model of the tail component and report an excellent improvement effect in tail distribution of retention time without device degradation.

Published in:

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Date of Conference:

13-15 June 2000