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A 900-MHz T/R switch with a 0.8-dB insertion loss implemented in a 0.5-μm CMOS process

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2 Author(s)
Feng-Jung Huang ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA ; O, K.

A single-pole, double-throw transmit/receive switch for 3.0-V applications has been fabricated in a 0.5-μm CMOS process. The switch exhibits a 0.8-dB insertion loss and a 17-dBm P1dB. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, and by minimizing the substrate resistances, while the high 1 dB compression point is achieved by DC biasing the input and output nodes

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Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000

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