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Optimization and surface charge sensitivity of high-voltage blocking structures with shallow junctions

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1 Author(s)
H. Yilmaz ; Siliconix Inc., Santa Clara, CA, USA

The most commonly used high-voltage blocking and termination structures-floating field limiting rings (FLR), lateral charge control HVIC devices, and junction termination extension (JTE) structures-are very sensitive to positive silicon and silicon dioxide interface charges. These high-voltage termination structures specifically designed for 1000-V blocking capability lose 25 to 50% of their voltage-blocking capability under 5×1011 cm-2 net interface state density. In contrast, optimized multiple-zone JTE (MZ-JTE), and offset multiple field plated and field-limiting ring (OFP-FLR) structures will lose only 5% of their respective voltage blocking capabilities under the same surface-charge condition. These improved high-voltage blocking structures do not require additional passivation and process complexities

Published in:

IEEE Transactions on Electron Devices  (Volume:38 ,  Issue: 7 )