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GaAs/AlGaAs waveguide pin photodiodes with non-absorbing input facets fabricated by quantum well intermixing

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5 Author(s)
McDougall, S.D. ; Dept. of Electron. & Electr. Eng., Glasgow Univ., UK ; Jubber, M.J. ; Kowalski, O.P. ; Marsh, J.H.
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Waveguide photodiodes with non-absorbing input windows have been fabricated using a sputtered silica quantum well intermixing technique. Thermal modelling of the GaAs/AlGaAs photodiodes indicates that facet temperatures can be significantly reduced with window lengths of greater than 10 μm. Device testing shows that optical damage occurs at double the power of conventional photodiodes with absorbing facets

Published in:

Electronics Letters  (Volume:36 ,  Issue: 8 )