By Topic

Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Balandin, A. ; Dept. of Electr. Eng., California Univ., Riverside, CA, USA

The gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors has been investigated in the linear and subsaturation regions. Analysis of experimental data for different transistors indicates that for all examined biases the noise spectrum is dominated by the channel noise rather than noise originating in the series resistors. The obtained results shed new light on the noise sources and may lead to improvements in the noise performance of GaN transistors

Published in:

Electronics Letters  (Volume:36 ,  Issue: 10 )