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X-ray characterization of bulk InP:S crystals crown by LEC in a low thermal gradient

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7 Author(s)
D. F. Bliss ; Res. Lab., Hanscom AFB, MA, USA ; G. Bryant ; G. Antypas ; B. Raghothamachar
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Single crystals of S-doped InP grown with very low dislocation density under conditions of low axial and radial thermal gradients, are typified by a flat solid-liquid interface. For these crystals, the hot zone of the growth system is designed to sustain vertical, rather than radial heat flow through the crystal. The consequence of a reduced thermal gradient, together with the dislocation pinning effect of sulfur doping, produces single crystal InP crystals with EPD<500/cm2 . Dislocations generated at the periphery of the growing crystal are blocked by the high S-concentration, especially at striations where high doping concentrations increase the critical resolved shear stress on a local scale

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Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

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