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(AlxGa1-x)0.5In0.5P barrier layer grown by gas source molecular beam epitaxy for V-band (Al xGa1-x)0.5In0.5P/In0.2 Ga0.8As/GaAs power pseudomorphic HEMT

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7 Author(s)
Zaknoune, M. ; Inst. d''Electron. et de Microelectron. du Nord, Lille I Univ., Villeneuve d''Ascq, France ; Schuler, O. ; Wallart, X. ; Piotrowicz, S.
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In this paper, we report the design, fabrication and for the first time power characterization in V-band of (Al,Ga)InP/InGaAs/GaAs power Pseudomorphic High Electron Mobility Transistors grown by Gas Source Molecular Beam Epitaxy. The GaInP/InGaAs/GaAs, AlGaInP/InGaAs/GaAs, AlInP/InGaAs/GaAs Pseudomorphic HEMT structures have been studied from the point of view of the growth as well as the technological process. For the three barrier materials, 0.1×100-μm2 T-gate devices were characterized in small signal and large signal conditions at 60 GHz. The best of them, the single side doped GaInP/InGaAs/GaAs structure exhibit an impressive current density of 780 mA/mm, a transconductance of 700 mS/mm and a cut-off frequency of 120 GHz. Power characterizations have been performed at 60 GHz. The Ga0.5In 0.5P/In0.2Ga0.8As/GaAs device has demonstrated a maximum output power density of 560 mW/mm

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Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

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