Referenced Items are not available for this document.
A uni-traveling-carrier photodiode (UTC-PD), featuring high-output power and a fast response, was monolithically integrated into a 0.1-μm-gate InP-based HEMT digital IC that can operate at over 40 Gbit/s. In the digital OEIC fabrication using our integration technology, the demultiplexing function of an optical-input D-type flip-flop (D-FF) circuit using 40-Gbit/s return-to-zero (RZ) optical signal and 20-GHz electrical clock signal was confirmed. This integration technology enables the development of a simplified receiver unit with high performance for use in 40-Gbit/s and over TDM systems
Published in:
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Date of Conference: 2000
- Page(s):
- 329 - 332
- Meeting Date :
- 14 May 2000-18 May 2000
- ISSN :
- 1092-8669
- Print ISBN:
- 0-7803-6320-5
- INSPEC Accession Number:
- 6709565
- Conference Location :
- Williamsburg, VA
- Digital Object Identifier :
- 10.1109/ICIPRM.2000.850299
- Product Type:
- Conference Publications
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