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Six-band k/spl middot/p approach to the effects of doping on energy dispersion in p-type strained In/sub 0.15/Ga/sub 0.85/As-Al/sub 0.33/Ga/sub 0.67/As quantum-well structures

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3 Author(s)
Shi, W. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Dao Hua Zhang ; Osotchan, T.

We report an application of the six-band Luttinger-Kohn model to the subband energy dispersions in the valence band for the p-type In/sub 0.15/Ga/sub 0.85/As-Al/sub 0.33/Ga/sub 0.67/As quantum-well (QW) structures. It was found that, in addition to the contentional biaxial compressive strain related to the lattice constant and well width of the structures, the p-type doping also caused a shift of the subband energy levels in the valence band by varying the barrier height. It was also found that the strain of the QW structures was not a constant but was sensitive to the p-type doping density, which also induced the shift of the subband energy levels. The calculated results, based on intersubband transitions of the heavy holes and taking the doping-related changes in strain and barrier height into account, were in good agreement with the experimental data, measured using Fourier transform infrared technique.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:36 ,  Issue: 7 )