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Low temperature analysis of 0.25 μm T-gate strained Si/Si0.55Ge0.45 n-MODFET's

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6 Author(s)
Aniel, F. ; Inst. d''Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France ; Zerounian, N. ; Adde, R. ; Zeuner, M.
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A low temperature dc and HF investigation of 0.25 μm T-gate Si/Si0.55Ge0.45 n-MODFET's is presented. Outstanding maximum oscillation frequencies fmax range from 100-120 GHz at 300 K up to 195 GHz at 50 K. These high-frequency characteristics are the first reported at low temperature on Si/SiGe n-MODFET's and are also the highest room temperature data reported so far; physical modeling is used to explain the main trends observed when cooling down the n-MODFET. Many experimental data are presented. The dependence on temperature and biases of the important small-signal equivalent circuit parameters is investigated to analyze the device high-frequency performances and the minimum noise figure of the intrinsic device is determined

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Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 7 )