By Topic

Simulation of the RF performance of AlGaAs/GaAs heterojunction bipolar transistors: application of fast Fourier transform

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Liou, L.L. ; Univ. Energy Systems Inc., Dayton, OH, USA ; Ezis, A. ; Ikossi-Anastasiou, K. ; Huang, C.I.

The results of a Fourier decomposition technique approach to simulate the small signal microwave performance of AlGaAs/GaAs heterojunction bipolar transistors are reported. For demonstration, a 1-D numerical simulation code is used to obtain the transient base and collector currents resulting from a small base-emitter voltage step superimposed on a DC bias. The frequency-dependent common-emitter current gain and associated phase shift are then determined by using the discrete fast Fourier transform technique. This approach gives the same accuracy as obtained by the traditional point-by-point method with the benefit of acquiring a wide range of frequency response with just one input signal waveform.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 6 )