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High-voltage lateral RESURF MOSFETs on 4H-SiC

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4 Author(s)
Chatty, K. ; Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.

High-voltage lateral RESURF MOSFETs have been fabricated on 4H-SiC with both nitrogen and phosphorus as source/drain and RESURF region implants. Blocking voltages as high as 1200 V and specific on-resistances of 4 /spl Omega/ cm/sup 2/ have been obtained, with the high on-resistance attributed to poor inversion layer mobility. Phosphorus is most appropriate for the source/drain implants due to low sheet resistance and contact resistance with low temperature anneals. However, poor activation of low dose phosphorus implants at 1200/spl deg/C makes nitrogen the preferred choice for the RESURF region.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 7 )

Date of Publication:

July 2000

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