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An asymmetric Ni-offset method was proposed to improve the electrical properties of poly-Si thin-film transistors (TFTs) fabricated by metal-induced lateral crystallization (MILC). The MILC/MILC boundary, which was inevitably located within the channel when formed by symmetric Ni-offset, could be successfully extracted from channel region by new asymmetric Ni-offset method. Therefore, thus fabricated TFTs showed lower leakage current and better thermal stability than symmetric Ni-offset TFTs. In addition, the effects of electrical stress and temperature on the electrical properties of symmetric/asymmetric Ni-offset TFTs were investigated.
Published in:
Electron Device Letters, IEEE
(Volume:21
,
Issue:
7
)
Date of Publication: July 2000
- Page(s):
- 347 - 349
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6647078
- Digital Object Identifier :
- 10.1109/55.847376
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- July 2000
- Sponsored by :
- IEEE Electron Devices Society
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