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Electrical and reliability properties of ultrathin La/sub 2/O/sub 3/ gate dielectric have been investigated. The measured capacitance of 33 /spl Aring/ La/sub 2/O/sub 3/ gate dielectric is 7.2 /spl mu/F/cm/sup 2/ that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 /spl Aring/. Good dielectric integrity is evidenced from the low leakage current density of 0.06 A/cm/sup 2/ at -1 V, high effective breakdown field of 13.5 MV/cm, low interface-trap density of 3/spl times/10/sup 10/ eV/sup -1//cm/sup 2/, and excellent reliability with more than 10 years lifetime even at 2 V bias. In addition to high K, these dielectric properties are very close to conventional thermal SiO/sub 2/.