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Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/

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5 Author(s)
Wu, Y.H. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Yang, M.Y. ; Chin, Albert ; Chen, W.J.
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Electrical and reliability properties of ultrathin La/sub 2/O/sub 3/ gate dielectric have been investigated. The measured capacitance of 33 /spl Aring/ La/sub 2/O/sub 3/ gate dielectric is 7.2 /spl mu/F/cm/sup 2/ that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 /spl Aring/. Good dielectric integrity is evidenced from the low leakage current density of 0.06 A/cm/sup 2/ at -1 V, high effective breakdown field of 13.5 MV/cm, low interface-trap density of 3/spl times/10/sup 10/ eV/sup -1//cm/sup 2/, and excellent reliability with more than 10 years lifetime even at 2 V bias. In addition to high K, these dielectric properties are very close to conventional thermal SiO/sub 2/.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 7 )

Date of Publication:

July 2000

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