By Topic

Gallium arsenide solid state travelling wave amplifier at 8 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
J. J. Thompson ; Dept. of Electron. & Electr. Eng., Glasgow Univ., UK ; M. R. S. Taylor ; A. M. Thompson ; S. P. Beaumont
more authors

A solid state travelling wave amplifier using interdigitated DC isolated fingers has been fabricated on low doped GaAs using electron beam lithography and has been shown to give 13 dB/mm microwave gain at 7.95 GHz with an applied transverse DC field of 1.5 kV/cm.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 6 )