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New method for extraction of effective channel length in submicron MOSFETs

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2 Author(s)
K. Iniewski ; Dept. of Electr. Eng., Toronto Univ., Ont., Canada ; C. A. T. Salama

A new method for effective channel length extraction in submicron MOSFETS is presented. It is based on measurements of the saturation voltage VDSAT in devices with different channel lengths. The method has been tested using submicron double diffused drain (DDD) MOS devices.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 6 )