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24 Gbit/s regenerating demultiplexer IC in silicon bipolar technology

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4 Author(s)
Hauenschild, J. ; Ruhr-Univ., Bochum, AG Halbleiterbauelemente, Germany ; Rein, H.M. ; McFarland, W. ; Pettengill, D.

A 1:2 regenerating demultiplexer IC has been realised in an advanced self-aligned silicon bipolar technology using 0.8 mu m lithography. The circuit can be operated up to 24 Gbit/s at 5 V supply voltage. This is by far the highest data rate reported for a demultiplexer in any IC technology.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 6 )

Date of Publication:

14 March 1991

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