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AlGaAs/InGaAs MODFETs having 25% indium in the channel and LG=0.35 mu m have been fabricated. From DC device characterisation, a maximum saturation current of 670 mA/mm and an extrinsic transconductance of 500 mS/mm have been measured. A maximum unilateral gain cutoff frequency of fc=205 GHz and a maximum current gain cutoff frequency of fT=86 GHz have been achieved. Bias dependence of fc and fT has been measured. At 12 GHz a minimum noise figure of NF=0.8 dB and an associated gain of 11 dB have been measured.