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Al0.25Ga0.75As/In0.25Ga0.75As pseudomorphic MODFET with high DC and RF performance

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6 Author(s)
Dickmann, J. ; Res. Center Ulm, Daimler Benz AG, Germany ; Geyer, A. ; Daembkes, H. ; Nickel, H.
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AlGaAs/InGaAs MODFETs having 25% indium in the channel and LG=0.35 mu m have been fabricated. From DC device characterisation, a maximum saturation current of 670 mA/mm and an extrinsic transconductance of 500 mS/mm have been measured. A maximum unilateral gain cutoff frequency of fc=205 GHz and a maximum current gain cutoff frequency of fT=86 GHz have been achieved. Bias dependence of fc and fT has been measured. At 12 GHz a minimum noise figure of NF=0.8 dB and an associated gain of 11 dB have been measured.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 6 )