By Topic

Epitaxial liftoff of AlAs/GaAs double barrier resonant tunnelling diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
A. J. Tsao ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; V. K. Reddy ; D. P. Neikirk

For the first time, the successful removal of AlAs/GaAs double barrier resonant tunnelling diodes from the substrate using the epitaxial liftoff technique is reported. Ohmic contacts were formed to the top and bottom of the devices, using indium-alloyed ohmic contacts for the backside of the lifted-off diodes. Room temperature peak-to-valley ratios of 3.4 with peak current densities of 50 kA/cm2 were obtained.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 6 )