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A Si/SiGe HBT dielectric resonator push-push oscillator at 58 GHz

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3 Author(s)
F. X. Sinnesbichler ; Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany ; B. Hautz ; G. R. Olbrich

In this work, we present a dielectric resonator push-push oscillator at 58 GHz. The microstrip circuit is fabricated in hybrid thin-film technology on a 10 mil alumina substrate. Flip-chip bonded Si/SiGe HBT's are used as active devices. A maximum output power of -8 dBm and a phase noise of -105 dBc/Hz at an offset frequency of 1 MHz have been measured. At a lower output power of -14 dBm an optimum phase noise of -112 dBc/Hz has been achieved. The mechanical tuning range of the oscillator is approximately 500 MHz

Published in:

IEEE Microwave and Guided Wave Letters  (Volume:10 ,  Issue: 4 )