By Topic

Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hamel, J.S. ; Dept. of Electron. & Comput. Sci., Southampton Univ., UK ; Stefanou, S. ; Bain, M. ; Armstrong, B.M.
more authors

Experimental s/sub 21/ transmission crosstalk studies have been conducted on silicon-on-insulator substrates with buried ground planes (GPSOI's) where a 2 /spl Omega/ per square metal-silicide buried ground plane existed between a 15 /spl Omega/-cm p-type silicon substrate and a 1 μm thick buried CVD oxide layer. Locally grounded transmission test structures fabricated on GPSOI were found to exhibit 20 dB increased crosstalk suppression compared to published data for high resistivity (200 /spl Omega/-cm) SOI substrates incorporating capacitive guard rings over a frequency range from 500 MHz to 50 GHz. This represents an order of magnitude improvement in crosstalk power suppression capability compared to existing state-of-the-art suppression techniques in silicon substrates.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:10 ,  Issue: 4 )