By Topic

Spectral properties of amplified spontaneous emission in semiconductor optical amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Boucher, Y. ; ENIB/RESO, Brest, France ; Sharaiha, A.

We present a theoretical investigation of the spectral properties of spontaneous emission in semiconductor optical amplifiers. We use an extended (3/spl times/3) transfer matrix formalism to derive in the spectral domain an expression for the total longitudinally averaged internal field, which is valid regardless of the levels of optical input and bias current. The material parameters are saturated not only by the monochromatic signal, but also by the amplified spontaneous emission, filtered into the resonance modes of the structure, and integrated over its whole spectral range.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:36 ,  Issue: 6 )