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This paper reports the experimental results of the development of a novel capacitive divider for high-voltage pulse measurements. The low-voltage (LV) arm capacitor was prepared by thermally growing silicon oxide on commercially available silicon wafers to form capacitors of very large capacitance per unit area (>10 nF with 2 μm oxide thickness on a 30 mm-diameter wafer). With the proposed design for LV arm capacitance, divider ratios of the order >10000 can easily be obtained
Published in:
Industry Applications, IEEE Transactions on
(Volume:36
,
Issue:
3
)
Date of Publication: May/Jun 2000
- Page(s):
- 920 - 922
- ISSN :
- 0093-9994
- INSPEC Accession Number:
- 6619184
- Digital Object Identifier :
- 10.1109/28.845072
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May/Jun 2000
- Sponsored by :
- IEEE Industry Applications Society
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