High-divider-ratio fast-response capacitive dividers for high-voltage pulse measurements

This paper reports the experimental results of the development of a novel capacitive divider for high-voltage pulse measurements. The low-voltage (LV) arm capacitor was prepared by thermally growing silicon oxide on commercially available silicon wafers to form capacitors of very large capacitance per unit area (>10 nF with 2 /spl mu/m oxide thickness on a 30 mm-diameter wafer). With the proposed design for LV arm capacitance, divider ratios of the order >10000 can easily be obtained.