Referenced Items are not available for this document.
The authors report the fabrication and performance of the first monolithically integrated In/sub 0.53/Ga/sub 0.47/As receiver with voltage-tunable transimpedance. In this receiver, a SiN/sub x/ passivated p-i-n diode is integrated with an In/sub 0.53/Ga/sub 0.47/As transimpedance amplifier using multiple-etched steps to assist lithography and step coverage of the interconnection metallization. The p-i-n diode has an external quantum efficiency of 82% at a wavelength of 1.3 mu m and -5 V bias. Adjusting the gate bias of a narrow-gate feedback transistor gives the receiver a tunable transimpedance of 19-36 Omega , a responsivity of 17-30 kV/W, and an unequalized bandwidth of 90-130 MHz.<
Published in:
Photonics Technology Letters, IEEE
(Volume:3
,
Issue:
8
)
Date of Publication: Aug. 1991
- Page(s):
- 757 - 760
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 4028283
- Digital Object Identifier :
- 10.1109/68.84477
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug. 1991
- Sponsored by :
- IEEE Photonics Society
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