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Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure

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3 Author(s)
Wan, H.W. ; Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore ; Chong, T.C. ; Chua, S.J.

It is shown that In/sub 1-x/Ga/sub x/As/In/sub 0.52/Al/sub 0.48/As MQW structures with the wells under tensile strain obtained by the appropriate selection of the Ga mole fraction and well size can achieve polarization-insensitive optical switching and modulation for a wide range of wavelengths between 1.0 and 1.6 mu m. For example, a change in refractive index of -0.5% at about 1.55 mu m will facilitate an intersectional angle of more than 10 degrees in a total internal reflection switch which can be readily fabricated. Hence, this material system is promising for long-wavelength polarization-insensitive semiconductor optoelectronic devices.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:3 ,  Issue: 8 )

Date of Publication:

Aug. 1991

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