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Optimisation of λ=850 nm hybrid-mirror vertical-cavity surface-emitting laser with 37 μA threshold current

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2 Author(s)
Langenfelder, T. ; Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektronik, Tech. Univ. Munchen, Germany ; Grothe, H.

A vertical-cavity surface-emitting laser (VCSEL) structure is optimised for low threshold current. The cavity comprises a GaAlAs bottom DBR with a dielectric SiO2-Si3N4 output mirror on top. The asymmetrical active region consists of GaAs-QWs, emitting at 850 nm. Selective lateral oxidation is applied to the p-side AlAs layer for current confinement. With the realised structure, a record low threshold current for selectively oxidised, hybrid Ga(Al)As lasers of Ith=37 μA at an oxide-aperture diameter of Øap=4.9 μm is achieved. The observed multimode emission spectrum is analysed using a simplified theoretical model for the transverse-mode guiding, and first experimental results of a redesigned VCSEL structure with single-mode operation at similar aperture diameters are presented

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Optoelectronics, IEE Proceedings -  (Volume:147 ,  Issue: 1 )