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An efficient and robust parameter extraction method for the bipolar compact MEXTRAM model has been developed and applied to Si/SiGe heterostructure bipolar transistors. The purpose is to extract as many transistor parameters as possible by an appropriately chosen set of DC and AC measurements without fitting the parameters to the transistor model. These parameters give a useful insight into the physical behavior of the transistor, which lends itself to derive a scalable transistor model and to make a proper circuit design. The extracted model is validated in the design and characterization of an active receive mixer for 11 GHz.