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TLM characterization of planar microwave transformers for monolithic power amplifiers

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2 Author(s)
Rebel, J. ; Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany ; Russer, P.

The time domain characterization of planar microwave transformers for monolithic RF power amplifiers using the SCN-TLM method is described in this paper. The primary objective of this study is to determine the influence of losses on the electrical properties of such transformers. For this a simplified model and a full model of the real transformer are investigated. We found that the principle loss mechanism originates from conductor losses of the windings. The influence of the lossy Si substrate can be neglected up to 5 GHz.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Date of Conference:

28-28 April 2000