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Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures

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9 Author(s)
Esmark, K. ; Infineon Technol., Munich, Germany ; Furbock, C. ; Gossner, H. ; Groos, G.
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Electro-thermal simulation and a laser-interferometric thermal mapping technique are employed to study temperature distribution and dynamics in smart power technology electrostatic discharge (ESD) protection npn transistor devices during a high current stress. The simulation predicts two temperature peaks along the device length which are due to a vertical and lateral current pathway in the studied devices. The temperature distribution in the device is studied via the measurements of the temperature-induced optical phase shift from the device backside. The position of the temperature peaks, their temporal evolution and stress level dependence obtained by experiment and simulation are in good agreement

Published in:

Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International

Date of Conference:

2000