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Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures

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9 Author(s)
K. Esmark ; Infineon Technol., Munich, Germany ; C. Furbock ; H. Gossner ; G. Groos
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Electro-thermal simulation and a laser-interferometric thermal mapping technique are employed to study temperature distribution and dynamics in smart power technology electrostatic discharge (ESD) protection npn transistor devices during a high current stress. The simulation predicts two temperature peaks along the device length which are due to a vertical and lateral current pathway in the studied devices. The temperature distribution in the device is studied via the measurements of the temperature-induced optical phase shift from the device backside. The position of the temperature peaks, their temporal evolution and stress level dependence obtained by experiment and simulation are in good agreement

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Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International

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