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Silicon-on-insulator technology impacts on SRAM testing

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2 Author(s)
Adams, R.D. ; Int. Bus. Machines, Essex Junction, VT, USA ; Shephard, P., III

Silicon-on-insulator (SOI) SRAMs have different characteristics from those fabricated in traditional bulk silicon. Fault models and sensitivities must be considered when testing for SOI manufacturing defects. Circuit details of SOI SRAMs that relate to testing are presented and a new pattern is described which covers the related fault models

Published in:

VLSI Test Symposium, 2000. Proceedings. 18th IEEE

Date of Conference:

2000

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