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Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 μA

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3 Author(s)
Fujita, M. ; Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan ; Ushigome, R. ; Baba, T.

A threshold current of 40 μA, nearly 1/4 of the previous lowest record, has been obtained in a GaInAsP-InP microdisk injection laser. This decrease was thought to be mainly due to the reduction of disk diameter and symmetric post-claddings by Cl2/Xe inductively coupled plasma etching

Published in:

Electronics Letters  (Volume:36 ,  Issue: 9 )