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Browse Journals & Magazines > Electronics Letters ...> Volume:36 Issue:9 Help

Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 μA

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3 Author(s)
Fujita, M. ; Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan ; Ushigome, R. ; Baba, T.

A threshold current of 40 μA, nearly 1/4 of the previous lowest record, has been obtained in a GaInAsP-InP microdisk injection laser. This decrease was thought to be mainly due to the reduction of disk diameter and symmetric post-claddings by Cl2/Xe inductively coupled plasma etching

Published in:
Electronics Letters  (Volume:36 ,  Issue: 9 )

Date of Publication: 27 Apr 2000

Page(s):
790 - 791
ISSN :
0013-5194
INSPEC Accession Number:
6584843
Digital Object Identifier :
10.1049/el:20000609
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
27 Apr 2000
Sponsored by :
Institution of Engineering and Technology

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