Close category search window
 

3-D visualization of deep submicrometer transistor characteristics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Sitte, R. ; Fac. of Inf. & Commun. Technol., Griffith Univ., Brisbane, Qld.

This paper presents a method for the, three-dimensional (3-D) visualization of device parameters to help identify potential regions of operation as well as highlighting process interactions. The results of the visualization are color-coded mappings of the device parameters and regions that meet the required specification, both showing three process parameters simultaneously. The mappings can be presented as rotating volumes (cubes) and slice plot. They can be obtained with relative ease using commercially available software, and the approach could easily be integrated into existing simulation software

Published in:
Semiconductor Manufacturing, IEEE Transactions on  (Volume:13 ,  Issue: 2 )

Date of Publication: May 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.