By Topic

An empirical three-dimensional crossover capacitance model for multilevel interconnect VLSI circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Shyh-Chyi Wong ; Res. Dev., Taiwan Power Co., Taipei, Taiwan ; Trent Gwo-Yann Lee ; Dye-Jyun Ma ; Chuan-Jane Chao

We develop an empirical model for the crossover capacitance induced by the wire crossings in VLSI with multilevel metal interconnects. The crossover capacitance, which is formed in any three adjacent layers and of a three-dimensional (3-D) nature, is derived in closed form as a function of the wire geometry parameters. The total capacitance on a wire passing many crossings can then be easily determined by combining the crossover capacitance with the two-dimensional (2-D) intralayer coupling capacitance defined on a same layer. The model agrees well with the numerical field solver (with a 6.7% root-mean-square error) and measurement data (with a maximum error of 4.17%) for wire width and spacing down to 0.16 μm and wire thickness down to 0.15 μm. The model is useful for VLSI design and process optimization

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:13 ,  Issue: 2 )