Thermoelectric properties of Sb-doping in the TiNiSn1-xSbx half-Heusler system

Half Heusler alloys, MNiSn (M = Zr, Hf, Ti) systems, have recently been studied for their potential as new thermoelectric materials. They have shown both high thermopower (α) values (40-250 μV/K) and reasonable values of electrical resistivity, ρ (0.1-8 mΩ-cm). However, the thermal conductivity in these systems is high for a potential thermoelectric material, on the order of 4-10 W/m-K. In an effort to reduce the thermal conductivity through alloy scattering, Sb is substituted on the Sn site with compositions TiNiSn
_1-x
Sb
_x
where x = 0 to 0.1. With this substitution, the thermopower is only slightly reduced while the resistivity is reduced by approximately one order of magnitude resulting in marked improvement in the power factor (α
²
T/ρ). Thermopower, resistivity, and thermal conductivity have been measured on a series of Sb doped TiNiSn samples from 10 K < T < 300 K. Heat capacity and Hall measurements on these same samples are measured from 2 K to 350 K and will be discussed. A room temperature power factor in this system has been calculated to be as high as 1.4 W/m-K, making these materials interesting for potential thermoelectric applications.