We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Si/sub 1-x-y/GexCy-channel p-MOSFET's with improved thermal stability

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mocuta, A.C. ; Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA ; Greve, D.W.

We report the fabrication of heterostructure Si/sub 1-x-y/Ge/sub x/C/sub y/ channel p-MOSFETs with low-carbon Si/sub 1-x-y/Ge/sub x/C/sub y/ channels. The use of low carbon mole fraction (y=0.002) has only a small effect (/spl Lt/kT) on the valence band offset. A carbon mole fraction of this value improves the thermal stability of the channel region and makes it possible to use conventional thermal oxidation and ion implant annealing without causing layer relaxation. A peak room-temperature hole mobility of 200 cm/sup 2//Vs was measured in a device with a 30-nm channel and a germanium mole fraction ramped from 10% to 40%.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 6 )