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A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier

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3 Author(s)
Khemka, V. ; Digital DNA Labs., Motorola Inc., Mesa, AZ, USA ; Ananthan, V. ; Chow, T.P.

A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier has been designed, fabricated and characterized for the first time. The use of a TMBS structure helps improve the reverse leakage current by more than three orders of magnitude compared to that of a planar Schottky rectifier. We have achieved a low reverse leakage current density of 6/spl times/10/sup -6/ A/cm/sup 2/ and a low forward voltage drop of 1.75 V at 60 A/cm/sup 2/ for the TMBS rectifier. The static current-voltage (I-V) and switching characteristics of the TMBS rectifier have been measured at various temperatures. A barrier height of 1.0 eV and an ideality factor of 1.8 were extracted from the forward characteristics. The switching characteristics do not change with temperature indicating the essential absence of stored charge.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 6 )