By Topic

A compact monolithic C-band direct conversion receiver

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
B. Matinpour ; Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA ; C. Chun ; S. Han ; C. -H. Lee
more authors

A compact monolithic C-band direct conversion receiver has been implemented in a commercial 0.6 μm GaAs MESFET process. Subharmonic mixing is utilized to suppress even-order intermodulations and eliminate DC offsets. Second-order input intercept point (IIP2) of +17 dBm, third-order input intercept point (IIP3) of +8 dBm, and DC offset of -80 dBm are measured on wafer without the use of additional off-chip components. This receiver occupies a die area of 35×53 mil2 and operates on 2.7 V with 21 mA of DC current. This is the first demonstration of a C-band direct conversion receiver MMIC with excellent linearity, DC offset, and DC power consumption.

Published in:

IEEE Microwave and Guided Wave Letters  (Volume:10 ,  Issue: 2 )