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On-chip interconnect lines with patterned ground shields

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2 Author(s)
Lowther, R. ; Harris Semicond., Melbourne, FL, USA ; Sang-Gug Lee

Measurements of on-chip interconnect lines with a patterned ground shield (PGS) are analyzed and compared to lines with no ground shield (NGS). At frequencies at and below 7 GHz, the PGS lines have about one fifth the dissipative loss of that of the NGS lines. By using a doped layer in the silicon for the shield, as opposed to other metal layers which are closer to the line, a reasonably high characteristic impedance is maintained. The transmission line characteristics are also analyzed

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:10 ,  Issue: 2 )
RFIC Virtual Journal, IEEE