By Topic

Simplified method to investigate quantum mechanical effects in MOS structure inversion layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ma, Yutao ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Litian Liu ; Zhiping Yu ; Zhijian Li

A simplified method to calculate the band bending and subband energies is employed to investigate quantum mechanical effects (QMEs) in MOS structure inversion layer. The subband structure and the two-dimensional (2-D) density-of-states in semi-classical and quantum mechanical cases are then calculated. The well-known band-gap widening model is analyzed through a density-of-states point of view and a new scheme to analyse and model QMEs in an MOS inversion layer is proposed

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 6 )