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A novel high-voltage sustaining structure with buried oppositely doped regions

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3 Author(s)
Xing Bi Chen ; Univ. of Electron. Sci. & Technol. of China, Chengdu, China ; Xin Wang ; Sin, J.K.O.

A novel high-voltage sustaining structure with buried oppositely doped regions is demonstrated. Due to the compensation of the electric field provided by these regions, the resistivity and/or the thickness of the voltage-sustaining layer can be made smaller than that of a conventional one with the same breakdown voltage, and therefore the on-resistance (of unipolar conduction) can be reduced. The theory developed for designing such structures is found to be in good agreement with the results obtained from two-dimensional (2-D) simulation as well as from experiment. A 500 V VD-MOST using such a structure as the drift region and with proper edge termination is fabricated. Results show that its on-resistance is lower than the value given by the conventional “silicon limit”

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Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 6 )