By Topic

A new approach for computing the bandwidth statistics of avalanche photodiodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hayat, M.M. ; Electro-Opt. Program, Dayton Univ., OH, USA ; Dong, G.

A new approach for characterizing the avalanche-buildup-time-limited bandwidth of avalanche photodiodes (APD's) is introduced which relies on the direct knowledge of the statistics of the random response time. The random response time is the actual duration of the APD's finite buildup limited random impulse response function. A theory is developed characterizing the probability distribution function (PDF) of the random response time. Recurrence equations are derived and numerically solved to yield the PDF of the random response time. The PDF is then used to compute the mean and the standard deviation of the bandwidth. The dependence of the mean and the standard deviation of the bandwidth on the APD mean gain and the ionization coefficient ratio is investigated. Exact asymptotics of the tail of the PDF of the response time are also developed to aid the computation efficiency. The technique can be readily applied to multiplication models which incorporate dead space and can be extended to cases for which the carrier ionization coefficient is position dependent

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 6 )