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Monte Carlo study of sub-0.1 μm Si0.97C0.03/Si MODFET: electron transport and device performance

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4 Author(s)
Dollfus, P. ; Inst. d''Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France ; Galdin, Sylvie ; Hesto, P. ; Velazquez, J.E.

We study the electron transport in tensile strained Si1-y Cy pseudomorphically grown on Si(100) substrate, and in n-channel short gate Si1-yCy/Si MODFETs using an ensemble Monte Carlo simulation. The alloy potential in Si1-yCy is used as a parameter, ranging from 0 to 2 eV. When the alloy scattering reduces drastically the intrinsic transport properties in Si1-yCy alloys, the nonstationary transport occurring in ultrashort gate MODFETs decreases the influence of scattering processes. The device performance can then fully benefit from the strain-induced reduction of effective mass

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Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 6 )